Low temperature growth of CeO2 (111) layer on Si(100) using dual plasma deposition

Materials Science and Engineering: A

Volumn 308, Issue 1-2, 2001, Pages 176-179

  Wang, L P ^a,b   Tang, B Y ^a,b   Huang, N ^a   Tian, X B ^a   Chu, P K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Cerium dioxide; Dual plasma deposition; Temperature

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; DEPOSITION; SILICON; STOICHIOMETRY; SURFACE TOPOGRAPHY; THERMAL EFFECTS; X RAY DIFFRACTION;

PLASMA;

CERIUM COMPOUNDS;

CRYSTAL;

EID: 0035973433     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)01991-2     Document Type: Article

References (17)

1. Wang A., Belot J.A., Marks T.J., Markworth P.R., Chang R.P.H., Chudzik M.P., Kannewurf C.R. Physica. C320:1999;154.
2. Yoon D.S., Baik H.K., Lee S.M. J. Vac. Sci. Technol. B17:1999;174.
3. Inoue T., Yamamoto Y., Koyama S., Suzuki S., Udea Y. Appl. Phys. Lett. 29:1990;1332.
4. Koinuma H., Nagata H., Tsudahara T., Gonda S., Yoshimoto M. Appl. Phys. Lett. 58:1991;2027.
5. Chikyow T., Bedair S.M., Tye L., Ei-Masry N.A. Appl. Phys. Lett. 65:1994;1080.
6. Jang S.H., Jung D., Roh Y. J. Vac. Sci. Technol. B16:1998;1098.
7. Inoue T., Yamamoto Y., Satoh M. Thin Solid Films. 343:1999;594.
8. Ikegawa S., Motoi Y. Thin Solid Films. 281:1996;60.
9. Wang L.P., Tang B.Y., Tian X.B., Leng Y.X., Zhang Q.Y., Chu P.K. J. Mat. Sci. Technol. 17:2001;29.
10. Conrad J.R., Radtke J.L., Dodd R.A., Worzala F.J., Tran N.C. J. Appl. Phys. 62:1987;4591.
11. Tian X.B., Zhang T., Zeng Z.M., Tang B.Y., Chu P.K. J. Vac. Sci. Technol. A17:(6):1999;3255.
12. Zeng Z.M., Zhang T., Tang B.Y., Tian X.B., Chu P.K. Surf. Coatings Technol. 115:(2-3):1999;234.
13. Zeng Z.M., Zhang T., Tian X.B., Tang B.Y., Kwok T.K., Chu P.K. Surf. Coatings Technol. 128-129:2000;236.
14. Geavit S.M., Ehrich H., Schuhmann J. IEEE Trans. Plasma Sci. 25:1997;386.
15. Anders A., Anders S., Brown I.G., Dickinson M.R., MacGill R.A. J. Vac. Sci. Technol. B12:1994;815.
16. Chu P.K., Tang B.Y., Cheng Y.C., Ko P.K. Rev. Sci. Instrum. 68:(4):1997;1866.
17. Zhang Z., Lagally M.G. Science. 276:1997;377.