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Volumn 81, Issue 1-3, 2001, Pages 136-139
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Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN
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Author keywords
Er implanted undoped and Mg doped GaN; Temperature dependence of photoluminescence spectra
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Indexed keywords
ENERGY GAP;
ERBIUM;
ION IMPLANTATION;
NITRIDES;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
GALLIUM NITRIDES;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0035942412
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(00)00694-2 Document Type: Article |
Times cited : (9)
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References (20)
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