Neodymium and erbium implanted GaN

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 69-74

  Silkowski, E ^a   Yeo, Y K ^a   Hengehold, R L ^a   Goldenberg, B ^a   Pomrenke, G S ^a  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ENERGY GAP; ERBIUM; GALLIUM COMPOUNDS; GAS LASERS; LUMINESCENCE OF INORGANIC SOLIDS; NEODYMIUM; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ARGON LASERS; BANDGAP; ERBIUM IMPLANTED GALLIUM NITRIDE; GALLIUM NITRIDE; NEODYMIUM IMPLANTED GALLIUM NITRIDE; RADIATIVE CENTERS;

RARE EARTH ELEMENTS;

EID: 0030388547     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-69     Document Type: Conference Paper

References (11)