GID study of strains in Si due to patterned SiO2

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Daniel, A ^a   Holy V ^b   Zhuang, Y ^a   Roch, T ^a   Grenzer, J ^c   Bochnicek Z ^b   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MASARYK UNIVERSITY   (Czech Republic)

^c UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BORN APPROXIMATIONS; X-RAY GRAZING INCIDENCE DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 0035926689     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/341     Document Type: Article

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