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Advanced Materials

Volumn 13, Issue 14, 2001, Pages 167-172

CVD of SiC from methyltrichlorosilane. Part I: Deposition rates

(3) Condorelli, G G a Gennaro, S a Fragala I L a

a UNIVERSITY OF CATANIA (Italy)

Author keywords

Methyltrichlorosilane; Silicon carbide; Surface area volume ratio

Indexed keywords

CHEMICAL REACTORS; CHLORINE COMPOUNDS; HYDROGEN; MIXTURES; PRESSURE; REACTION KINETICS; SILICON CARBIDE; SURFACE PROPERTIES; TEMPERATURE;

DEPOSITION RATES; METHYLTRICHLOROSILANE; SURFACE AREA; VOLUME RATIO;

CHEMICAL VAPOR DEPOSITION;

EID: 0035908557 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.