Residence-time dependent kinetics of CVD growth of SiC in the MTS/H2 system

Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 253-260

  Josiek, A ^a   Langlais, F ^a  

^a Laboratoire des Composites Thermostructuraux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DERIVATIVES; HYDRIDES; REACTION KINETICS; SILANES; SILICON CARBIDE;

CHEMICAL VAPOR DEPOSITION GROWTH; GROWTH RATE; METHYLTRICHLOROSILANE; RESIDENCE TIME DEPENDENT KINETICS;

SEMICONDUCTOR GROWTH;

EID: 0030110034     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00744-X     Document Type: Article

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