Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 403-405

  Rokuta, E ^a   Hotta, Y ^a   Kubota, T ^a   Tabata, H ^a   Kobayashi, H ^a   Kawai, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; FILM GROWTH; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION RESISTANCE; SILICON COMPOUNDS; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; PHOTOIRRADIATION;

FERROELECTRIC THIN FILMS;

EID: 0035898428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1385799     Document Type: Article

References (11)