Ferroelectric properties of bismuth layer-structured compound SrxBi4-xTi3-xTaxO12 (0 ≦ x ≦ 2)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 B, 1999, Pages 5497-5499

  Nagata, Hajime ^a   Chikushi, Naohito ^a   Takenaka, Tadashi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12; Bismuth layer structured ferroelectrics; D Ehysteresis loop; Fatigue free; SrBi2Ta2O9

Indexed keywords

CERAMIC MATERIALS; COMPOSITION EFFECTS; FERROELECTRIC MATERIALS; FERROELECTRICITY; HYSTERESIS; POLARIZATION; REMANENCE; SUBSTITUTION REACTIONS;

BISMUTH LAYER-STRUCTURED FERROELECTRICS;

BISMUTH COMPOUNDS;

EID: 0032606668     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5497     Document Type: Article

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