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Volumn 170, Issue 1-4, 1997, Pages 103-108
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Demonstration of the N2 carrier process for LP-MOVPE of III/V's
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION ANALYSIS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030654625
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00545-3 Document Type: Article |
Times cited : (15)
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References (12)
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