Inverted Staebler-Wronski effect in nanocrystalline silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 320-323

  Matsumoto, T ^a   Kondo, M ^b   Nair, S V ^a   Masumoto, Y ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Infrared; Light; Silicon

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLUMINESCENCE; PHOTOLYSIS; POROUS SILICON;

STAEBLER-WRONSKI EFFECT;

SEMICONDUCTING SILICON;

EID: 0032068314     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00226-9     Document Type: Article

References (9)

1. D.L. Staebler, C.R. Wronsky, Appl. Phys. Lett. 31 (1977) 292.
2. L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
3. R.W. Hardeman, M.I.J. Beale, D.B. Gasson, J.M. Keen, C. Pickering, D.J. Robbins, Surf. Sci. 152-153 (1985) 1051.
4. T. Matsumoto, Y. Masumoto, N. Koshida, MRS Symp. Proc. 452 (1997) 449.
5. Z.Y. Xu, M. Gal, M. Gross, Appl. Phys. Lett. 60 (1992) 1375.
6. M.A. Tishler, R.T. Collins, J.H. Stathis, J.C. Tsang, Appl. Phys. Lett. 60 (1992) 639.
7. Y. Nishi, Jpn. J. Appl. Phys. 10 (1971) 52.
8. C. Tsai, K.-H. Li, J. Sarathy, S. Shih, J.C. Campbell, B.K. Hance, J.M. White, Appl. Phys. Lett. 59 (1991) 2814.
9. S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, F.M. Ross, T.D. Harris, W.L. Brown, Y.J. Chabel, L.E. Brus, P.H. Citrin, Phys. Rev. Lett. 72 (1994) 2648.