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Volumn 89, Issue 10, 2001, Pages 5332-5338

Dislocations induced by bubble formation in high energy He implantation in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035873549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1327289     Document Type: Article
Times cited : (29)

References (24)
  • 16
    • 0004143957 scopus 로고
    • Monograph three, Interpretation of Transmission Electron Micrographs Macmillan, London
    • J. W. Edington, Practical Electron Microscopy in Materials Science, Monograph three, Interpretation of Transmission Electron Micrographs (Macmillan, London, 1975).
    • (1975) Practical Electron Microscopy in Materials Science
    • Edington, J.W.1
  • 18
    • 0041163388 scopus 로고
    • edited by Robert Hull Inspec, London
    • A. George, in Properties of Crystalline Silicon, edited by Robert Hull (Inspec, London, 1991), Vol. 20, p. 108.
    • (1991) Properties of Crystalline Silicon , vol.20 , pp. 108
    • George, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.