Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 212-215

  Ishikawa, K ^a   Uchiyama, Y ^a   Ogawa, H ^a   Fujimura, S ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Dielectric function of amorphous SiO 2; Infrared spectroscopy; IR RAS; Si SiO 2 interface; Silicon oxide film

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DENSIFICATION; DENSITY (SPECIFIC GRAVITY); FILM GROWTH; FUSED SILICA; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMAL EFFECTS;

DIELECTRIC FUNCTIONS; LONGITUDINAL OPTICAL (LO) MODE FREQUENCY; TRANSVERSE OPTICAL (TO) MODE FREQUENCY;

SEMICONDUCTING FILMS;

EID: 0031548533     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80081-5     Document Type: Article

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