Growth of preferentially oriented microcrystalline silicon film using pulse-modulated ultrahigh-frequency plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Murata, Kazuya ^a   Mizutani, Yuko ^a   Iwasaka, Emi ^a   Takashima, Seigou ^a   Hori, Masaru ^a   Goto, Toshio ^a   Samukawa, Seiji ^b   Tsukada, Tsutomu ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Anelva Corporation ^*  (Japan)

Author keywords

H atom density; Preferential orientation; Pulse modulation; UHF PECVD; VUVAS; c Si:H

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; FILM GROWTH; GLASS; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

HYDROGEN ATOM DENSITY;

SEMICONDUCTING SILICON;

EID: 0035862498     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l4     Document Type: Article

References (11)