Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 176-177

  Saito, Yuji ^a   Sekine, Katsuyuki ^a   Ueda, Naoki ^a   Hirayama, Masaki ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; OXYGEN; PLASMA APPLICATIONS; SILICON COMPOUNDS; THERMOOXIDATION; WATER;

SILICON OXIDE; ULTRATHIN GATE OXIDE;

VLSI CIRCUITS;

EID: 0033700295     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)