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Volumn 80, Issue 4, 2000, Pages 539-546

Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

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EID: 0034175288     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810008209762     Document Type: Article
Times cited : (7)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.