Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements

Materials Science and Engineering: B

Volumn 86, Issue 3, 2001, Pages 228-231

  Singh, R ^a   Arora, S K ^a   Singh, J P ^a   Tyagi, Renu ^b   Agarwal, S K ^b   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Deep level defects; In situ resistivity and Hall measurements; n GaAs epitaxial layer; Nuclear and electronic energy loss; Swift heavy ion irradiation

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; EPITAXIAL GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035802450     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00707-3     Document Type: Article

References (22)