Swift heavy ion induced defect study in epitaxial n-type GaAs from in situ Hall effect measurements

Journal de Physique III

Volumn 7, Issue 8, 1997, Pages 1661-1676

  Mikou, M ^a   Carin, R ^a   Bogdanski, P ^a   Marie, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL IMPURITIES; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; HALL EFFECT; ION BOMBARDMENT; MAGNETIC FIELD MEASUREMENT; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ELECTRONIC STOPPING POWER; HALL MOBILITY; NUCLEAR STOPPING POWER;

SEMICONDUCTING FILMS;

EID: 0031209484     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997216     Document Type: Article

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