SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 561-565

Phosphorus redistribution in the surface region of heavily phosphorus doped silicon

(6) Mizokawa, Y a Ying, W B a Yu, Y B a Kamiura, Y a Iida, M b Kawamoto, K b

a Osaka Prefecture University (Japan)

b DENSO CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; DOPING (ADDITIVES); HEATING; HYDROFLUORIC ACID; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

DANGLING BOND; PHOSPHORUS REDISTRIBUTION; SPUTTER PROFILES; THIN NATIVE OXIDE FILM;

SURFACE PHENOMENA;

EID: 0030564533 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00339-X Document Type: Article

Times cited : (14)

References (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.