Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 393-396

  Ying, W B ^a   Mizokawa, Y ^a   Tanahashi, K ^a   Kamiura, Y ^a   Iida, M ^b   Kawamoto, K ^b   Yang, W Y ^c  

^a Osaka Prefecture University   (Japan)

^b DENSO CORPORATION   (Japan)

^c NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Angle dependent X ray photoelectron spectroscopy; Atomic force microscopy; Heavily P doped Si; HF treatment; Phosphorus segregation; Poly Si

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; BINDING ENERGY; CRYSTAL LATTICES; OXIDATION; PHOSPHORUS; PLASTIC FILMS; SEMICONDUCTING FILMS; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

THIN FILMS;

EID: 0032648682     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00118-2     Document Type: Article

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