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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 B, 1999, Pages 5358-5360

Annealing effect of Pb(Zr, Ti)O3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system

(6) Minamikawa, Toshiharu a Yonezawa, Yasuto a Nakamura, Takashi b Fujimori, Yoshikazu b Masuda, Atsushi c Matsumura, Hideki a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA (Japan)

c ROHM CO LTD (Japan)

Author keywords

Catalytic chemical vapor deposition; Cracked ammonia treatment; Ferroelectrics; Passivation films; Pb(Zr, Ti)O3; Silicon nitride films

Indexed keywords

AMMONIA; ANNEALING; CATALYTIC CRACKING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; PASSIVATION; SILICON NITRIDE; THERMAL EFFECTS;

LEAD ZIRCONATE TITANATE;

CAPACITORS;

EID: 0033334968 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5358 Document Type: Article

Times cited : (10)

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