Effect of r.f.-plasma assistance in hot-wire CVD on properties of μc-Si:H

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 217-220

  Itoh, Takashi ^a   Inouchi, Hiroki ^a   Ohkado, Kaori ^a   Chikusa, Kenji ^a   Nakamura, Naoki ^a   Kondo, Hiroaki ^a   Yoshida, Norimitsu ^a   Nonomura, Shuichi ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

c Si:H; Deposition rate; Hot wire CVD; r.f. plasma assistance

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLIZATION; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); MICROCRYSTALLINE SILICON;

THIN FILMS;

EID: 0035800994     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01271-8     Document Type: Conference Paper

References (7)