Increase of hydrogen-radical density and improvement of the crystalline volume fraction of microcrystalline silicon films prepared by hot-wire assisted PECVD method

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Yoshida, N ^a   Itoh, T ^a   Inouchi, H ^a   Harada, H ^a   Inagaki, K ^a   Yamana, N ^a   Yamamoto, K ^a   Nonomura, S ^a   Nitta, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; FILM PREPARATION; FREE RADICALS; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE REACTIONS; VOLUME FRACTION;

MICROCRYSTALLINE SILICON FILMS; RADICAL DENSITY;

SEMICONDUCTING FILMS;

EID: 0034431263     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a19.3     Document Type: Conference Paper

References (6)