Behavior of a charged two-level fluctuator in an al-alor-al single-electron transistor in the normal and superconducting state

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 4261-4264

  Kenyon, M ^a  

^a SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRON TUNNELING; ENERGY GAP; JOSEPHSON JUNCTION DEVICES; MATHEMATICAL MODELS; PHONONS; QUANTUM THEORY; TUNNEL JUNCTIONS;

QUANTUM TUNNELING; SINGLE ELECTRON TRANSISTOR; SINGLE PHONON SCATTERING; TRANSPORT ELECTRON INELASTIC SCATTERING; TWO LEVEL FLUCTUATOR;

TRANSISTORS;

EID: 0032641266     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783966     Document Type: Article

References (14)

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8. For details on the fabrication process, the experimental procedure we used to determine the /-I<,-!(, characteristics, and the method we used to find the device parameters, see M. Kenyon, A. Amar, D. Song. O. J. Lobb. and F. C. Wellstood, "Behavior of Al-AOs-Al single-electron transistors from 85 mK to 5 K," Appl. Phys. Litt., vol. 72. pp. 22682270, May 1998.
9. The normal state data is also presented in M. Kenyon. Jonathan L. Cobb, A. Amar, D. Song. C. J. Lobb. r. C. Wellstood, and Neil M. Zimmernian, Dynamics of a charge fluctuatorin an A]-A1O-A1 single-electron transistor," submitted to Phys. Rev. B July 30. 1998. Details of [.lie normal state model are also discussed in this paper.
10. 1 is an overall scaling factor, proportional to the crosssection and fi is the energy need to excite the ntictuator when it is in state 1. The other terms in this equation are explained in the discussion following Eq. (1).
11. Neil W. Ashcroft and N. David Mermin. Solid Stats Phi/sics. Saunders College Publishing: Fort Worth. 1970. p. 744.
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14. D. Song, "Properties of the Coulomb-blockade electrometer in the superconducting state," PhD. thesis. University of Maryland College Park, pp. 37-47. 1997.