Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 954-967

  Kim, Young Chang ^a   Vandenberghe, Geert ^a   Verhaegen, Staf ^a   Ronse, Kurt ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

100 nm node; ArF; Attenuated PSM; Mask error; MEEF; Off axis illumination; Resolution enhancement

Indexed keywords

ARGON; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ERROR ANALYSIS; LIGHT TRANSMISSION; PHOTOLITHOGRAPHY; SILICON WAFERS;

MASK ERROR EFFECTS;

MASKS;

EID: 0035767844     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458259     Document Type: Article

References (10)

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