Surface preparation for selective tungsten deposition on MEMS structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4558, Issue , 2001, Pages 181-188

  Resnick, P J ^a   Mani, S S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Coatings; CVD; HF; MEMS; Selective; Surface treatment; Tungsten; Vapor; Wear

Indexed keywords

CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; DISSOLUTION; MORPHOLOGY; POLYTETRAFLUOROETHYLENES; STICTION; SURFACE TENSION; SURFACE TREATMENT; TUNGSTEN;

LIQUID PHASE PROCESSING;

MICROELECTROMECHANICAL DEVICES;

EID: 0035767703     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.443010     Document Type: Conference Paper

References (13)

1. R. Maboudian and R.T. Howe, "Critical Review: Adhesion in surface micromechanical structures", J. Vac. Sci. Technol. B 15(1), pp. 1-20, 1997.
2. M.T. Dugger, S.S. Mani, D.E. Peebles and G.A. Poulter, "Friction and wear resistance of tungsten coatings on silicon micromachined devices related to their surface chemistry", Materials Research Society Fall Meeting, Boston, MA, 2000.
3. 2 sacrificial layer for large-area surface-micromachined membranes", Sensors and Actuators A, 64, pp. 247-251, 1998.
4. Y. Lee, K. Park, J. Lee, C. Lee, H.J. Yoo, C.J. Kim, and Y. Yoon, "Dry release for surface micromachining with HF vapor-phase etching", J. of Micrelectromechanical Systems, Vol 6, No. 3, pp 226-233, 1997.
5. 3OH for sacrificial oxide removal", Sensors and Actuators A, 64, pp. 27-32, 1998.
6. R.K. Iler, The Chemistry of Silica, ch. 6, John Wiley & Sons, New York, 1979.
7. G.W. Tracks, K. Raghavachari, G.S. Higashi, and Y.J. Chabal, "Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation", Phys. Rev. Let., Vol 65, No 4., pp. 504-507, 1990.
8. 2", J. Vac. Sci. Techol. A 10(4), pp. 806-811, 1992.
9. 2 layers using wet HF gas", J. Vac. Sci. Technol. A, 7(3), pp. 1719-1723, 1989.
10. 3OH", J. Electrochem. Soc., Vol 143, No. 3, pp. 1099-1103, 1996.
11. M.L. Yu, B.N. Eldridge, and R.V. Joshi, "Tungsten and other Refractory Metals for VLSI, Applications III", edited by V.A. Wells, Mat. Res. Soc. Proc., Pittsburgh, PA, 1988.
12. M.L. Yu, B.N. Eldridge, and R.V. Joshi, "Deposition and Growth: Limits for Microelectronics", edited by G.W. Rubloff, p. 202, AIP Conf. Proc. 167, New York, 1988.
13. 4 at several temperatures", J. Electrochem. Soc, vol. 139, no 8, p. 2331, 1992.