Properties of epitaxial lead-chalcogenide on silicon infrared devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3316, Issue 2, 1998, Pages 768-773

  Zogg, Hans ^a   John, J ^a   Tiwari, A N ^a   Alchalabi, K ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; THERMAL CYCLING; THERMAL EXPANSION;

EPITAXIAL LEAD CHALCOGENIDE PROPERTIES;

INFRARED DEVICES;

EID: 0032303883     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)