Investigation of attenuated phase-shifting mask material for 157-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 61-71

  Onodera, Toshio ^a   Matsuo, Takahiro ^a   Itani, Toshiro ^a   Morimoto, Hiroaki ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

157 nm lithography; Attenuated phase shifting mask; F2 laser; Irradiation durability; Resolution enhancement technology; Transparency; VUV lithography

Indexed keywords

ETCHING; IRRADIATION; MASKS; OPTICAL FILMS; PHASE SHIFT; SILICON; SUBSTRATES; TANTALUM; ZINC;

PHASE SHIFTING MASKS;

LITHOGRAPHY;

EID: 0035759030     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435642     Document Type: Conference Paper

References (5)

1. T. Matsuo, T. Onodera, K. Nakazawa, T. Ogawa, H. Morimoto, T. Haraguchi, N. Fukuhara, T. Matsuo, M. Otaki, and S. Takeuchi, "Application of Zirconium Silicon Oxide Films to an Attenuated Phase-Shifting Mask in ArF lithography", Jpn. J. Appl. Phys., 38, pp. 7004-7007, 1999.
2. T. Onodera, T. Matsuo, K. Nakazawa, J. Miyazaki, T. Ogawa, H. Morimoto, T. Haraguchi, N. Fukuhara, T. Matsuo, M. Otaki, and S. Takeuchi, "ZrSiO, a new and robust material for attenuated phase-shift masks in ArF lithography", Proc. SPIE, 3873, pp. 337-343, 1999.
3. y as a material for attenuated phase-shift masks in ArF lithography", Proc. SPIE, 4066, pp. 682-687, 2000.
4. H. Suda, H. Mitsui, O. Nozawa, H. Ohtsuka, M. Takeuchi, N. Nishida, Y. Ohkubo, and M. Ushida, "Development of halftone phase-shift blank and mask fabrication for ArF lithography", Proc. SPIE, 4066, pp. 671-681, 2000.
5. T. Matsuo, T. Onodera, T. Itani, H. Morimoto, T. Haraguchi, K. Kanayama, T. Matsuo, and M. Otaki, "Materials for an Attenuated Phase-Shifting Mask in 157nm Lithography", Proc. SPIE, 4186, pp. 268-274, 2000.