Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7004-7007

  Matsuo, Takahiro ^a   Onodera, Toshio ^a   Nakazawa, Keisuke ^a   Ogawa, Tohru ^a   Morimoto, Hiroaki ^a   Haraguchi, Takashi ^b   Fukuhara, Nobuhiko ^b   Matsuo, Tadashi ^b   Otaki, Masao ^b   Takeuchi, Susumu ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOPPAN PRINTING CO LTD   (Japan)

Author keywords

ArF lithography; Attenuated phase shifting mask; Bi layer; Durability; Lifetime; Oxidation; Zirconium silicon oxide

Indexed keywords

DURABILITY; EXCIMER LASERS; MASKS; OXIDATION; PHOTOLITHOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

PHASE SHIFTING MASKS (PSM); ZIRCONIUM SILICON OXIDE FILMS;

NANOTECHNOLOGY;

EID: 0033328162     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7004     Document Type: Article

References (6)

1. T. Ogawa, M. Uematsu, T. Onodera, K. Nakazawa, M. Takahashi, T. Ohfuji, H. Ohtsuka and M. Sasago: Jpn. J. Appl. Phys. 36 (1997) 7482.
2. T. Matsuo, K. Ohkubo, T. Haraguchi and K. Ueyama: Proc. SPIE 3096 (1997) 354.
3. T. Haraguchi, T. Matsuo and S. Takeuchi: Proc. SPIE 3412 (1998) 609.
4. N. Fukuhara, K. Okubo, K. Tomiyama, Y. Hattori, T. Ohshima, K. Kanayama, T. Haraguchi, T. Matsuo and M. Otaki: Dig. Abstr. Symp. Photomask and X-lay Mask Technology, Yokohama (1999) p. 117.
5. T. Onodera, K. Nakazawa, K. Kamon, M. Sasago, M. Uematsu, T. Ogawa and H. Ohtsuka: Dig. Abstr. Int. Symp. 193 nm Lithography, Ohnuma (1997) p. 133.
6. J. Miyazaki, M. Uematsu, K. Nakazawa, T. Matsuo, T. Onodera and T. Ogawa: Proc. SPIE 3748 (1999) 324.