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Volumn 4066, Issue , 2000, Pages 682-687
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CrOxFy as a material for attenuated phase-shift masks in ArF lithography
a a a a a a a
a
NeTech Inc
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ATOMS;
EXCIMER LASERS;
INTERFACES (MATERIALS);
LITHOGRAPHY;
PHASE SHIFT;
PHOTORESISTS;
ATTENUATED PHASE SHIFT MASKS;
DEPTH OF FOCUS;
LASER IRRADIATION;
MASKS;
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EID: 0033666587
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.392100 Document Type: Conference Paper |
Times cited : (6)
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References (7)
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