Materials for an attenuated phase-shifting mask in 157 nm lithography

Proceedings of SPIE- The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 268-274

  Matsuo, T ^a   Onodera, T ^a   Itani, T ^a   Morimoto, H ^a   Haraguchi, T ^a   Kanayama, K ^a   Otaki, M ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

157nm lithography; Attenuated phase shifting mask; Durability against F2 laser light; F2 laser; Resolution enhancement technology; Transparency; VUV lithography

Indexed keywords

CRYSTAL DEFECTS; IRRADIATION; LASER OPTICS; OPTICAL RESOLVING POWER; PHASE SHIFT; PHOTOLITHOGRAPHY; SEMICONDUCTING FILMS; SILICA;

ATTENUATED PHASE-SHIFT MASKS; TRANSPARENT FILMS (TF);

MASKS;

EID: 0035049951     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.410703     Document Type: Article

References (9)

1. New silica glass (AQF) for 157-nm lithography
2. Dry & F doped fused silica for photo-mask substrate in 157 nm lithography
3. Application of Zirconium Silicon Oxide films to an attenuated phase-shifting mask in ArF lithography
4. ZrSiO, a new and robust material for attenuated phase-shift masks in ArF lithography
5. y as a material for attenuated phase-shift masks in ArF lithography
6. Development of halftone phase-shift blank and mask fabrication for ArF lithography
7. Fluoropolymers for 157-nm lithography: Optical properties from VUV absorbance and ellipsometry measurements
8. New modified silica glass for 157-nm lithography
9. 2 laser lithography