The lithography process design for 4Giga-bit DRAM of 0.31 k1 with KrF

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 205-213

  Park, Joonsoo ^a   Yeo, Gisung ^a   Kim, Insung ^a   Kim, Byeongsoo ^a   Lee, Junghyeon ^a   Cho, Hanku ^a   Moon, Jootae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Att. PSM; D R; DOF; DRAM; I D bias; KrF; OAI; OPC; RET

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; LIGHT SOURCES; LIGHTING; MASKS; OPTICAL DESIGN; OPTICAL INSTRUMENT LENSES; OPTICAL RESOLVING POWER; PHASE SHIFT;

OPTICAL PROXIMITY EFFECTS (OPE);

PHOTOLITHOGRAPHY;

EID: 0035759009     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435720     Document Type: Conference Paper

References (8)

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3. I.S. Kim et. al, "Challenge to 0.13μm device patterning using KrF", Proc. SPIE, Vol. 3679, pp.872-881 (1999).
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6. J. Fung Chen et. al, "Practical method for full-chip optical proximity correction", Proc. SPIE, Vol. 3051, pp.790-803 (1997).
7. Seiji Matsuura et. al, "DOF enhancement of isolated line patterns by newly developed assistant pattern method", Proc. SPIE, Vol. 3051, pp. 245-256 (1997).
8. M.H. Ryu et. al "Pattern asymmetry correction using assist patterns", Proc. SPIE, Vol., pp. (2000).