The emergence of assist feature OPC era in sub-130nm DRAM devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 452-459

  Kim, B ^a   Kim, I ^a   Yeo, G ^a   Lee, J ^a   Choi, J ^a   Cho, H ^a   Moon, J ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Assist feature; Attenuated PSM; DOF; Iso dense bias; OAI; OPC; RET

Indexed keywords

COMPUTER SIMULATION; IMAGING TECHNIQUES; MASKS; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY;

OPTICAL PROXIMITY CORRECTIONS (OPC);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0035040777     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.410722     Document Type: Conference Paper

References (3)

1. Lithographic comparison of assist feature design strategies
2. Sub-0.18um line/space lithography using 248nm scanners and assisting feature OPC masks
3. An OPC technology roadmap to 0.14um design rules