Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6770-6777

  Chim, Wai Kin ^a   Lim, Peng Soon ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Electrostatic discharge; Flicker noise; Hot carrier; Interface state; Latent damage; Oxide trap charge; Silicon dioxide

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; ELECTRON TRAPS; ELECTROSTATICS; GATES (TRANSISTOR); HOT CARRIERS; SILICA; SPURIOUS SIGNAL NOISE; STRESSES; TRANSCONDUCTANCE;

CHARGE TO BREAKDOWN MEASUREMENT; ELECTROSTATIC DISCHARGE; FLICKER NOISE; HIGH FIELD IMPULSE STRESS; LATENT DAMAGE; LOW FREQUENCY NOISE MEASUREMENT;

MOSFET DEVICES;

EID: 0035710444     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6770     Document Type: Article

References (16)