Hole-induced 1/f noise increase in MOS transistors

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 118-120

  Aoki, Masaaki ^a,b   Kato, Masataka ^a,b  

^a IEEE

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HOT CARRIERS; IRRADIATION; MICROSCOPIC EXAMINATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; X RAYS;

GATE OXIDES; HOLES; HOT CARRIER INJECTION; NOISE TRAPS; X RAY IRRADIATION;

MOSFET DEVICES;

EID: 0030108606     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485186     Document Type: Article

References (11)

1. A. L. McWhorter, Semiconductor Surface Physics, R. H. Kinston, Ed. Philadelphia, PA: Univ. of Pennsylvania, 1957, p. 207.
2. S. Christensson, I.Lundstrom, and C. Svensson, "Low frequency noise in MOS transistors I-Theory," Solid-State Electron., vol. 11, p. 797, 1968.
3. M. Aoki, Y. Sakai, and T. Masuhara, "Low 1/f noise design of Hi-CMOS devices" IEEE Trans. Electron Devices, vol. ED-29, p 296,; 1982.
4. Z. H. Fang, S. Cristoloveanu, and A. Chovet, " Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's" IEEE Electron Device Lett., vol. EDL-7, p. 371, 1986.
5. J. A. Babcock, J. L. Titus, R. D. Schrimpf, and K. F. Galloway, "Effects of ionizing radiation on the noise properties of DMOS power transistors," IEEE Trans. Nucl. Sci. vol. 38, p. 1304, 1991.
6. E. Takeda, "Hot-carrier effects in subrnicroinetre MOS VLSI's," in Proc. IEEE Inst. Elect., 131, pt. 1, p. 153, 1984.
7. K. R. Hofmann, W. Weber, C. Werner, and G. Dorda,"Hot carrier degradation inechanism in n-MOSFET's." in IEDM Tech, Dig., p. 104, 1984.
8. P. Heremans, H. E. Maes, and N. Saks, "Evaluation of hot carrier degradation of n-channel MOSFET's with the charge pumping technique," IEEE Electron Device Lett., vol. EDL-7, p. 428, 1986.
9. 2," Phys. Rev., B15, p. 2012, 1977.
10. M. Bourcerie, B. S. Doyle, J.-C. Marchetaux, J.-C. Soret, and A. Boudou, "Relaxable damage in hot-carrier stressing of n-MOS transistors- oxide traps in the near interfacial region of the gate oxide," IEEE Trans. Electron Devices, vol. 37, p. 708, 1990.
11. T. P. Ma, Ionizing Radiation Effects in MOS Devices & Circuits. New York: Wyey, 1989.