Observation of micro-oxygen precipitates in the vicinity of the oxidation-induced stacking fault ring and their effects on thin gate oxide breakdown

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 12 A, 2001, Pages

  Kim, Hyun Soo ^a,b   Lee, Ki Sang ^a,b   Lee, Bo Young ^a,b   Yoo, Hak Do ^a,b   Pyi, Seung Ho ^a,b   Koh, Chung Geun ^a,b   Hong, Byung Sub ^a,b   Kim, Yil Wook ^a,b  

^a LG Siltron Inc   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

AOP; Micro oxygen precipitates; OSF ring; Oxide breakdown

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ELECTRIC BREAKDOWN; OXIDATION; OXYGEN; SILICON WAFERS; STACKING FAULTS;

GATE OXIDE INTEGRITY (GOI); THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0035698596     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1286     Document Type: Article

References (12)