Defects in the oxidation-induced stacking fault ring region in Czochralski silicon crystal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3194-3199

  Harada, Kazuhiro ^a   Tanaka, Hideo ^b   Watanabe, Toshihiko ^b   Furuya, Hisashi ^a  

^a SUMCO CORPORATION   (Japan)

^b MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Cz silicon; In situ annealing; OSF; OSF ring; Oxygen precipitate

Indexed keywords

EID: 0000702809     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3194     Document Type: Article

References (12)

1. M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito: Proc. Int. Conf. Science and Technology of Defect Control in Semiconductors, Yokohama, Sept. 1989, ed. K. Sumino (Elsevier Science. Amsterdam, 1990) p. 157.
2. M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito: Jpn. J. Appl. Phys. 28 (1989) L1999.
3. K. Wada, H. Takaoka, N. Inoue and K. Kohra: Jpn. J. Appl. Phys. 18 (1979) 1629.
4. S. Sadamitsu, M. Okui, K. Sueoka, K. Marden and T. Shigematsu: Jpn. J. Appl. Phys. 34 (1995) L597.
5. K. Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto and S. Kobayashi: Mater. Sci. Forum 196-201 (1995) 1737.
6. K. Marsden, T. Kanda, M. Okui, M. Hourai and T. Shigematsu: Mater. Sci. & Eng., B 36 (1996) 16.
7. K. Harada, H. Furuya and M. Kida: Jpn. J. Appl. Phys. 36 (1997) 3366.
8. M. Itsumi, H. Akiya, M. Tomita, T. Ueki and M. Yamawaki: Proc. 2nd Int. Symp. Advanced Science and Technology of Silicon Materials, Kona-Hawai 1996, ed. M. Umeno (145th Committee on Processing and Characterization of Crystals, JSPS, 1996) p. 270.
9. H. Takeno, M. Kato and Y. Kitagawara: Proc. 2nd Int. Symp. Advanced Science and Technology of Silicon Materials, Kona-Hawai 1996, ed. M. Umeno (145th Committee on Processing and Characterization of Crystals, JSPS, 1996) p. 294.
10. T. Iizuka, S. Takasu, M. Tajima, T. Arai, M. Nozaki, N. Inoue and M. Watanabe: Proc. Symp. Defects in Silicon, Pennington, 1983 (Electrochem. Soc. Pennington, 1983) Proceedings Series, p. 265.
11. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama: Semicond. Sci. Technol. 7 (1992) A135.
12. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama: Proc. Symp. Advanced Science and Technology of Silicon Materials, Kona, Hawaii, 1991 (Japan Society for the Promotion of Science 145th Committee, Tokyo, 1991) p. 83.