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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 555-558

Neutron irradiation of 4H SiC

(6) Carlsson, F H C a Storasta, L a Magnusson, B a Bergman, J P a Skold K b Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b UPPSALA UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EXCITONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; PHOSPHORUS; PHOTOLUMINESCENCE; THERMAL EFFECTS;

ANNEALING TEMPERATURE; EPITAXIAL LAYERS; FAST NEUTRON FLUX;

SILICON CARBIDE;

EID: 14344280830 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.555 Document Type: Article

Times cited : (8)

References (8)

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