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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 745-748

On the microscopic structure of the EL6 defect in GaAs

(4) Steinegger, Th a Grundig Wendrock B c Jurisch, M b Niklas, J R c

a INFINEON TECHNOLOGIES AG (Germany)

b FREIBERGER COMPOUND MATERIALS GMBH (Germany)

c TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

Defects; GaAs; PICTS

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; LASER APPLICATIONS; LIGHT ABSORPTION; POSITRON ANNIHILATION SPECTROSCOPY; TOMOGRAPHY;

LASER SCATTERING TOMOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035675023 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00799-2 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.