Relation between EL2 group and EL6 group in SI-GaAs

Rare Metals

Volumn 15, Issue 3, 1996, Pages 194-195

  Fengmei, Wu ^a   Zhouying, Zhao ^b  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

EL2; EL6; PITS technique; Rapid thermal annealing; SI GaAs

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; SILICON ON INSULATOR TECHNOLOGY; SPECTROMETRY;

PHOTOINDUCED TRANSIENT SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030182323     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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