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Journal of Materials Science: Materials in Electronics

Volumn 8, Issue 4, 1997, Pages 239-245

Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy

(1) Yasutake, K a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRONIC DENSITY OF STATES; HALL EFFECT; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TEMPERATURE;

DEFECT LEVEL DENSITY; INFRARED ABSORPTION; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY; PHOTO INDUCED HALL EFFECT TRANSIENT SPECTROSCOPY; TENTATIVE DEFECT MODELS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031211783 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1018566701908 Document Type: Article

Times cited : (14)

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