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Volumn 442, Issue , 1997, Pages 405-410
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Anomalous deep center (EC-0.31 eV) in semi-insulating GaAs
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRONS;
POINT DEFECTS;
QUENCHING;
SPECTROSCOPY;
STOICHIOMETRY;
LIGHT INTENSITY;
PHOTOCURRENT;
POSITRON LIFETIME SPECTROSCOPY;
THERMALLY STIMULATED CURRENT SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030699738
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (19)
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