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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 808-811

Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be

(6) Specht, P a Cich, M J a Zhao, R a Gebauer, J a Luysberg, M b Weber, E R a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Be doping; Native point defects; Non stoichiometric GaAs; Thermal stability

Indexed keywords

ANNEALING; BERYLLIUM; CONCENTRATION (PROCESS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR DOPING; STOICHIOMETRY; SUBSTRATES; THERMODYNAMIC STABILITY;

NATIVE POINT DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035675010 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00809-2 Document Type: Article

Times cited : (4)

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