Electrical characterization of beryllium doped low temperature MBE grown GaAs

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 129-134

  Cich, M J ^a   Zhao, R ^a   Park, Y ^a   Specht, P ^a   Weber, E R ^a  

^a University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC PROPERTIES; ELECTRON EMISSION; LOW TEMPERATURE PROPERTIES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BREAKDOWN FIELD; FRENKEL-POOLE TYPE EMISSION; GROWTH TEMPERATURE; PREANNEALED FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033314709     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-129     Document Type: Conference Paper

References (6)

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