Formation and annihilation of H-point defect complexes in quenched Si doped with C

Journal of Applied Physics

Volumn 88, Issue 8, 2000, Pages 4525-4530

  Fukata, Naoki ^a   Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003171212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1312841     Document Type: Article

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