Electronic state, atomic configuration and local motion of hydrogen around carbon in silicon

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volumn 183, Issue , 2000, Pages 25-40

  Kamiura, Y ^a   Fukuda, K ^a   Yamashita, Y ^a   Ishiyama, T ^a  

^a OKAYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ETCHING; HYDROGEN; MATHEMATICAL MODELS;

ATOMIC CONFIGURATION;

SEMICONDUCTING SILICON;

EID: 0033682641     PISSN: 10120386     EISSN: None     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.183-185.25     Document Type: Article

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