메뉴 건너뛰기




Volumn 34, Issue 1, 1998, Pages 125-126

Low excess noise characteristics in thin avalanche region GaAs diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT;

EID: 0032495388     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980021     Document Type: Article
Times cited : (20)

References (8)
  • 1
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • McINTYRE, R.J.: 'Multiplication noise in uniform avalanche diodes', IEEE Trans. Electron Devices, 1966, ED-13, pp. 164-168
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 2
    • 0001685402 scopus 로고    scopus 로고
    • Noise characteristics of thin multiplication region GaAs avalanche photodiode
    • HU, C., ANSELM, K.A., STREETMAN, B.G., and CAMPBELL, J.C.: 'Noise characteristics of thin multiplication region GaAs avalanche photodiode', Appl. Phys. Lett., 1996, 69, pp. 3734-3736
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 3734-3736
    • Hu, C.1    Anselm, K.A.2    Streetman, B.G.3    Campbell, J.C.4
  • 3
    • 0018467683 scopus 로고
    • Theory of carrier multiplication and noise in avalanche devices-part I: One carrier processes
    • VAN VLIET, K.M., and RUCKER, L.M.: 'Theory of carrier multiplication and noise in avalanche devices-part I: one carrier processes', Trans. Electron Devices, 1979, 25, pp. 747-751
    • (1979) Trans. Electron Devices , vol.25 , pp. 747-751
    • Van Vliet, K.M.1    Rucker, L.M.2
  • 4
    • 0018467684 scopus 로고
    • Theory of carrier multiplication and noise in avalanche devices-part II: Two carrier processes
    • VAN VLIET, K.M., FRIEDMANN, A., and RUCKER, L.M.: 'Theory of carrier multiplication and noise in avalanche devices-part II: two carrier processes', Trans. Electron Devices, 1979, 26, pp. 751-764
    • (1979) Trans. Electron Devices , vol.26 , pp. 751-764
    • Van Vliet, K.M.1    Friedmann, A.2    Rucker, L.M.3
  • 5
    • 0022152203 scopus 로고
    • The determination of impact ionisation coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements
    • BULMAN, G.E., ROBBINS, V.M., and STILLMAN, G.E.: 'The determination of impact ionisation coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements', IEEE Trans. Electron Devices, 1986, ED-32, pp. 2454-2466
    • (1986) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2454-2466
    • Bulman, G.E.1    Robbins, V.M.2    Stillman, G.E.3
  • 7
    • 0031551196 scopus 로고    scopus 로고
    • Avalanche noise in submicrometre pin diodes
    • HERBERT, D.C.: 'Avalanche noise in submicrometre pin diodes', Electron. Lett., 1997, 33, (14), pp. 1257-1258
    • (1997) Electron. Lett. , vol.33 , Issue.14 , pp. 1257-1258
    • Herbert, D.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.