10-gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1232-1234

  Yun, T Y ^a   Park, M S ^a,c   Han, J H ^a   Watanabe, I ^b   Makita, K ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b NEC CORPORATION   (Japan)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BIT ERROR RATE; FEEDBACK; FEEDBACK AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); OPTICAL COMMUNICATION EQUIPMENT; PERFORMANCE; PHOTODIODES; SCHEMATIC DIAGRAMS; SENSITIVITY ANALYSIS; SIGNAL TO NOISE RATIO;

AVALANCHE PHOTODIODES; NOISE MATCHING NETWORK; OPTICAL RECEIVER; TRANSIMPEDANCE FEEDBACK;

SIGNAL RECEIVERS;

EID: 0030243195     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531846     Document Type: Article

References (7)

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4. L. M. Lunardi, S. Chandrasekhar, A. H. Gnauck, C. A. Burrus, and R. A. Hamm, "20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications," IEEE Photon. Technol. Lett., vol. 7, pp. 1201-1203, 1995.
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6. M. S. Park, C. H. Lee, and C. S. Shim, "Optical receiver design with high sensitivity and high dynamic range using feedback and lossy noise-matching network," Opt. Quantum Electron., vol. 27, pp. 527-534, 1995.
7. I. Watanabe, S. Sugou, H. Ishikawa, T. Anan, K. Makita, M. Tsuji, and K. Taguchi, "High-speed and low-dark-current flip-chip InAlAs/InAlGaAs superlattice APD's with 120 GHz gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 5, pp. 675-677, 1993.