Raman analysis of a crystalline SiC sample prepared from carbon-saturated melt of silicon

Chinese Physics Letters

Volumn 18, Issue 8, 2001, Pages 1123-1125

  Ma, Jian Ping ^a   Chen, Zhi Ming ^a   Lu, Gang ^a   Hang, Lian Mao ^a   Feng, Xian Feng ^a   Lei, Tian Min ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARBON; CRYSTALLINE MATERIALS; SILICON; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE STRUCTURE; FULL WIDTHS AT HALF MAXIMUMS; GRAPHITE CRUCIBLES; INNER WALLS; LONGITUDINAL OPTICAL MODES; RAMAN ANALYSIS; SECOND ORDER SCATTERING; SILICON MELTS; TRANSVERSE OPTICAL PHONONS; X-RAY PHOTOELECTRONS;

SILICON CARBIDE;

EID: 0035601591     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/8/343     Document Type: Article

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