Photoluminescence of polycrystalline SiC sintered from graphite and Si melt

Chinese Physics Letters

Volumn 17, Issue 10, 2000, Pages 770-772

  Chen, Zhi Ming ^a   Ma, Jian Ping ^a   Wang, Jian Nong ^b   Lu, Gang ^b   Yu, Ming Bin ^a   Lei, Tian Min ^a   Ge, Wei Kun ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; INCIDENT LIGHT; LASER EXCITATION; PHOTOLUMINESCENCE; SILICON; SILICON CARBIDE; SINTERING; TEMPERATURE; X RAY DIFFRACTION;

C X-RAY DIFFRACTION; HE-CD LASER; HIGHEST TEMPERATURE; LIGHT BEAM; POLYCRYSTALLINE SIC; PREFERENTIAL ORIENTATION; SINTERED MATERIALS; ULTRAVIOLET LIGHT IRRADIATION; WIDE TEMPERATURE RANGES; WIDE-BAND;

GRAPHITE;

EID: 0034362673     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/10/025     Document Type: Article

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