Electron-beam direct writing using RD2000N for fabrication of nanodevices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2857-2861

  Dutta, A ^a   Lee, S P ^a   Hayafune, Y ^a   Oda, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; NANOSTRUCTURED MATERIALS; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; TUNNEL JUNCTIONS;

ELECTRON-BEAM RESISTANCE; MULTIPLE TUNNEL JUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 0034317287     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1323969     Document Type: Article

References (13)

1. H. Ahmed, J. Vac. Sci. Technol. B 15, 2101 (1997).
2. J. Fujita, Y. Onishi, S. Manako, Y. Ochiai, E. Nomura, T. Sakamoto, and S. Matsui, Jpn. J. Appl. Phys., Part 1 36, 7769 (1997).
3. T. Sakamoto, H. Kawaura, and T. Baba, Appl. Phys. Lett. 72, 795 (1998).
4. S. Okazaki, F. Murai, O. Suga, and H. Shiraishi, J. Vac. Sci. Technol. B 5, 402 (1987).
5. T. Iwayanagi, T. Kohashi, S. Nonogaki, T. Matsuzawa, K. Douta, and H. Yanazawa, IEEE Trans. Electron Devices 28, 1306 (1981).
6. K. Nakazato, R. J. Blaikie, and H. Ahmed, J. Appl. Phys. 75, 5123 (1994).
7. K. Nakazato and H. Ahmed, Jpn. J. Appl. Phys., Part 1 34, 700 (1995).
8. K. A. Matsuoka, K. K. Likharev, P. Dresselhaus, L. Ji, S. Han, and J. Lukens, J. Appl. Phys. 81, 2269 (1997).
9. P. R. Deshmukh and W. S. Khokle, Microelectron. Reliab. 31, 1091 (1991).
10. A. Bezryadin and C. Dekker, Appl. Phys. Lett. 71, 1273 (1998).
11. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
12. I. Idris and O. Sugiura, Jpn. J. Appl. Phys., Part 1 37, 6562 (1998).
13. A. Dutta, S. P. Lee, Y. Hayafune, and S. Oda, Appl. Phys. Lett. 75, 1422 (1999).